IRGIB10B60KD1 IGBT Transistor

The IRGIB10B60KD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGIB10B60KD1 transistor as follows.

IRGIB10B60KD1 Transistor Specification

Transistor Code		IRGIB10B60KD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220_FULLPAK
Collector Power Dissipation (Maximum)	Pc	44W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.10V
Collector Current (Maximum)	IC	16A

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