IRGBC30S IGBT Transistor

The IRGBC30S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGBC30S transistor as follows.

IRGBC30S Transistor Specification

Transistor Code		IRGBC30S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector Power Dissipation (Maximum)	Pc	100W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	10V
Collector Current (Maximum)	IC	34A
Operating Junction Temperature (Maximum)		175 oC

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