IRGB4059DPBF IGBT Transistor

The IRGB4059DPBF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGB4059DPBF transistor as follows.

IRGB4059DPBF Transistor Specification

Transistor Code		IRGB4059DPBF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector Power Dissipation (Maximum)	Pc	56W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.05V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		25
Rise Time		10

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