IRG8P08N120KD IGBT Transistor

The IRG8P08N120KD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG8P08N120KD transistor as follows.

IRG8P08N120KD Transistor Specification

Transistor Code		IRG8P08N120KD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	89W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		30
Rise Time		20

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