IRG7RC10FD IGBT Transistor

The IRG7RC10FD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG7RC10FD transistor as follows.

IRG7RC10FD Transistor Specification

Transistor Code		IRG7RC10FD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252
Collector Power Dissipation (Maximum)	Pc	61W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	16.5A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		24
Rise Time		32

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