IRG7RC07SD IGBT Transistor

The IRG7RC07SD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG7RC07SD transistor as follows.

IRG7RC07SD Transistor Specification

Transistor Code		IRG7RC07SD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252
Collector Power Dissipation (Maximum)	Pc	39W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.2V
Collector Current (Maximum)	IC	16A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		22
Rise Time		10

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