IRG7PSH54K10D IGBT Transistor

The IRG7PSH54K10D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG7PSH54K10D transistor as follows.

IRG7PSH54K10D Transistor Specification

Transistor Code		IRG7PSH54K10D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO274AA
Collector Power Dissipation (Maximum)	Pc	520W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	120A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		290
Rise Time		80

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