IRG7PG35U IGBT Transistor

The IRG7PG35U is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG7PG35U transistor as follows.

IRG7PG35U Transistor Specification

Transistor Code		IRG7PG35U
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	210W
Collector-Emitter Voltage (Maximum)	VCE	1000V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	55A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		60
Rise Time		15

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