IRG4RC10SD IGBT Transistor

The IRG4RC10SD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4RC10SD transistor as follows.

IRG4RC10SD Transistor Specification

Transistor Code		IRG4RC10SD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D-PAK
Collector Power Dissipation (Maximum)	Pc	38W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)		150 oC

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