IRG4PF50WD IGBT Transistor

The IRG4PF50WD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4PF50WD transistor as follows.

IRG4PF50WD Transistor Specification

Transistor Code		IRG4PF50WD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247AC
Collector Power Dissipation (Maximum)	Pc	200W
Collector-Emitter Voltage (Maximum)	VCE	900V
Collector Current (Maximum)	IC	28A
Operating Junction Temperature (Maximum)		175 oC

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