IRG4IBC30FD IGBT Transistor

The IRG4IBC30FD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4IBC30FD transistor as follows.

IRG4IBC30FD Transistor Specification

Transistor Code		IRG4IBC30FD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISO220
Collector Power Dissipation (Maximum)	Pc	45W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.59V
Collector Current (Maximum)	IC	11A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		1100pF

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