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IRG4IBC20W IGBT Transistor

The IRG4IBC20W is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4IBC20W transistor as follows.

Circuit diagram symbol of the IRG4IBC20W transistor

IRG4IBC20W Transistor Specification

Transistor Code IRG4IBC20W
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISO220
Collector Power Dissipation (Maximum) Pc 34W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.16V
Collector Current (Maximum) IC 6.2A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 490pF

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