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IRG4IBC20UD IGBT Transistor

The IRG4IBC20UD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4IBC20UD transistor as follows.

Circuit diagram symbol of the IRG4IBC20UD transistor

IRG4IBC20UD Transistor Specification

Transistor Code IRG4IBC20UD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISO220
Collector Power Dissipation (Maximum) Pc 34W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.85V
Collector Current (Maximum) IC 6A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 530pF

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