IRG4BC30UDPBF IGBT Transistor

The IRG4BC30UDPBF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4BC30UDPBF transistor as follows.

IRG4BC30UDPBF Transistor Specification

Transistor Code		IRG4BC30UDPBF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector Power Dissipation (Maximum)	Pc	100W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.52V
Collector Current (Maximum)	IC	23A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		73
Rise Time		21

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