IRG4BC30FD1 IGBT Transistor

The IRG4BC30FD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4BC30FD1 transistor as follows.

IRG4BC30FD1 Transistor Specification

Transistor Code		IRG4BC30FD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector Power Dissipation (Maximum)	Pc	100W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.80V
Collector Current (Maximum)	IC	31A

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