IRG4BC30FD IGBT Transistor

The IRG4BC30FD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4BC30FD transistor as follows.

IRG4BC30FD Transistor Specification

Transistor Code		IRG4BC30FD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector Power Dissipation (Maximum)	Pc	100W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.80V
Collector Current (Maximum)	IC	17A
Operating Junction Temperature (Maximum)		150 oC

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