IRG4BC30F IGBT Transistor

The IRG4BC30F is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4BC30F transistor as follows.

IRG4BC30F Transistor Specification

Transistor Code		IRG4BC30F
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector Power Dissipation (Maximum)	Pc	100W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	17A
Operating Junction Temperature (Maximum)		150 oC

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