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IRG4BC20SD IGBT Transistor

The IRG4BC20SD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4BC20SD transistor as follows.

Circuit diagram symbol of the IRG4BC20SD transistor

IRG4BC20SD Transistor Specification

Transistor Code IRG4BC20SD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220AB
Collector Power Dissipation (Maximum) Pc 60W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.4V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 550pF
Rise Time 62

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