IRG4BC10SD IGBT Transistor

The IRG4BC10SD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4BC10SD transistor as follows.

IRG4BC10SD Transistor Specification

Transistor Code		IRG4BC10SD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector Power Dissipation (Maximum)	Pc	38W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)		175 oC

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