IRG4BC10SD-L IGBT Transistor

The IRG4BC10SD-L is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4BC10SD-L transistor as follows.

IRG4BC10SD-L Transistor Specification

Transistor Code		IRG4BC10SD-L
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO262
Collector Power Dissipation (Maximum)	Pc	38W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	14A

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