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IQS2B75N120K4 IGBT Transistor

The IQS2B75N120K4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IQS2B75N120K4 transistor as follows.

Circuit diagram symbol of the IQS2B75N120K4 transistor

IQS2B75N120K4 Transistor Specification

Transistor Code IQS2B75N120K4
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 400
Rise Time 75

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