IQS2B75N120K4 IGBT Transistor

The IQS2B75N120K4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IQS2B75N120K4 transistor as follows.

IQS2B75N120K4 Transistor Specification

Transistor Code		IQS2B75N120K4
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		400
Rise Time		75

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