IQS2B57N120K4 IGBT Transistor

The IQS2B57N120K4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IQS2B57N120K4 transistor as follows.

IQS2B57N120K4 Transistor Specification

Transistor Code		IQS2B57N120K4
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.87V
Collector Current (Maximum)	IC	57A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		300
Rise Time		60

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