IQS1B100N60L4 IGBT Transistor

The IQS1B100N60L4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IQS1B100N60L4 transistor as follows.

IQS1B100N60L4 Transistor Specification

Transistor Code		IQS1B100N60L4
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	335W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.45V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		384
Rise Time		36

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