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IQIB75N60A3 IGBT Transistor

The IQIB75N60A3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IQIB75N60A3 transistor as follows.

Circuit diagram symbol of the IQIB75N60A3 transistor

IQIB75N60A3 Transistor Specification

Transistor Code IQIB75N60A3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.5V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 288
Rise Time 36

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