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IQGB150N120I4 IGBT Transistor

The IQGB150N120I4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IQGB150N120I4 transistor as follows.

Circuit diagram symbol of the IQGB150N120I4 transistor

IQGB150N120I4 Transistor Specification

Transistor Code IQGB150N120I4
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 150A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 800
Rise Time 91

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