IQG1B150N120B4 IGBT Transistor

The IQG1B150N120B4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IQG1B150N120B4 transistor as follows.

IQG1B150N120B4 Transistor Specification

Transistor Code		IQG1B150N120B4
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		800
Rise Time		164

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