IQAB75N60A1 IGBT Transistor

The IQAB75N60A1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IQAB75N60A1 transistor as follows.

IQAB75N60A1 Transistor Specification

Transistor Code		IQAB75N60A1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	357W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.5V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		288
Rise Time		36

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