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IKW75N60H3 IGBT Transistor

The IKW75N60H3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IKW75N60H3 transistor as follows.

Circuit diagram symbol of the IKW75N60H3 transistor

IKW75N60H3 Transistor Specification

Transistor Code IKW75N60H3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 428W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 80A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 240
Rise Time 60

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