IKW50N60T IGBT Transistor

The IKW50N60T is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IKW50N60T transistor as follows.

IKW50N60T Transistor Specification

Transistor Code		IKW50N60T
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	333W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.5V
Collector Current (Maximum)	IC	80A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		29

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