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IKW30N60H3 IGBT Transistor

The IKW30N60H3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IKW30N60H3 transistor as follows.

Circuit diagram symbol of the IKW30N60H3 transistor

IKW30N60H3 Transistor Specification

Transistor Code IKW30N60H3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 187W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.95V
Collector Current (Maximum) IC 60A

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