IKQ100N60TA IGBT Transistor

The IKQ100N60TA is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IKQ100N60TA transistor as follows.

IKQ100N60TA Transistor Specification

Transistor Code		IKQ100N60TA
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	714W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.5V
Collector Current (Maximum)	IC	160A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		360
Rise Time		38

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