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IKP20N65F5 IGBT Transistor

The IKP20N65F5 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IKP20N65F5 transistor as follows.

Circuit diagram symbol of the IKP20N65F5 transistor

IKP20N65F5 Transistor Specification

Transistor Code IKP20N65F5
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector Power Dissipation (Maximum) Pc 125W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.6V
Collector Current (Maximum) IC 42A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 30
Rise Time 11

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