IKD10N60R IGBT Transistor

The IKD10N60R is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IKD10N60R transistor as follows.

IKD10N60R Transistor Specification

Transistor Code		IKD10N60R
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		DPAK(TO252)
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	20A

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