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IKD06N60RA IGBT Transistor

The IKD06N60RA is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IKD06N60RA transistor as follows.

Circuit diagram symbol of the IKD06N60RA transistor

IKD06N60RA Transistor Specification

Transistor Code IKD06N60RA
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO252
Collector Power Dissipation (Maximum) Pc 100W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.65V
Collector Current (Maximum) IC 12A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 24
Rise Time 7

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