IHW40N65R5 IGBT Transistor

The IHW40N65R5 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IHW40N65R5 transistor as follows.

IHW40N65R5 Transistor Specification

Transistor Code		IHW40N65R5
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	230W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.35V
Collector Current (Maximum)	IC	80A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		44
Rise Time		25

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