IHW40N60RF IGBT Transistor

The IHW40N60RF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IHW40N60RF transistor as follows.

IHW40N60RF Transistor Specification

Transistor Code		IHW40N60RF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	305W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.85V
Collector Current (Maximum)	IC	80A

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