IHW30N160R2 IGBT Transistor

The IHW30N160R2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IHW30N160R2 transistor as follows.

IHW30N160R2 Transistor Specification

Transistor Code		IHW30N160R2
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	1600V
Collector-Emitter Saturation Voltage	VCE(on)	2.35V
Collector Current (Maximum)	IC	60A

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