IHW30N135R3 IGBT Transistor

The IHW30N135R3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IHW30N135R3 transistor as follows.

IHW30N135R3 Transistor Specification

Transistor Code		IHW30N135R3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	349W
Collector-Emitter Voltage (Maximum)	VCE	1350V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		67

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