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IHW30N100T IGBT Transistor

The IHW30N100T is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IHW30N100T transistor as follows.

Circuit diagram symbol of the IHW30N100T transistor

IHW30N100T Transistor Specification

Transistor Code IHW30N100T
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 1000V
Collector-Emitter Saturation Voltage VCE(on) 1.55V
Collector Current (Maximum) IC 60A

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