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IHW20N65R5 IGBT Transistor

The IHW20N65R5 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IHW20N65R5 transistor as follows.

Circuit diagram symbol of the IHW20N65R5 transistor

IHW20N65R5 Transistor Specification

Transistor Code IHW20N65R5
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 150W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.35V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 175 oC
Rise Time 16

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