IGW50N65F5A IGBT Transistor

The IGW50N65F5A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGW50N65F5A transistor as follows.

IGW50N65F5A Transistor Specification

Transistor Code		IGW50N65F5A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	270W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.66V
Collector Current (Maximum)	IC	80A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		51
Rise Time		12

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