IGW30N65L5 IGBT Transistor

The IGW30N65L5 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGW30N65L5 transistor as follows.

IGW30N65L5 Transistor Specification

Transistor Code		IGW30N65L5
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	227W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.05V
Collector Current (Maximum)	IC	85A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		42
Rise Time		11

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