IGW100N60H3 IGBT Transistor

The IGW100N60H3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGW100N60H3 transistor as follows.

IGW100N60H3 Transistor Specification

Transistor Code		IGW100N60H3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	714W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.85V
Collector Current (Maximum)	IC	140A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		210
Rise Time		47

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