IGD06N60T IGBT Transistor

The IGD06N60T is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGD06N60T transistor as follows.

IGD06N60T Transistor Specification

Transistor Code		IGD06N60T
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		DPAK(TO252)
Collector Power Dissipation (Maximum)	Pc	88W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.5V
Collector Current (Maximum)	IC	12A

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