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IGC89T170S8RM IGBT Transistor

The IGC89T170S8RM is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC89T170S8RM transistor as follows.

Circuit diagram symbol of the IGC89T170S8RM transistor

IGC89T170S8RM Transistor Specification

Transistor Code IGC89T170S8RM
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package CHIP
Collector-Emitter Voltage (Maximum) VCE 1700V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 150 oC

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