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IGC70T120T8RQ IGBT Transistor

The IGC70T120T8RQ is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC70T120T8RQ transistor as follows.

Circuit diagram symbol of the IGC70T120T8RQ transistor

IGC70T120T8RQ Transistor Specification

Transistor Code IGC70T120T8RQ
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package CHIP
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.42V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 175 oC

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