IGC54T65R3QE IGBT Transistor

The IGC54T65R3QE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC54T65R3QE transistor as follows.

IGC54T65R3QE Transistor Specification

Transistor Code		IGC54T65R3QE
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.22V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		175 oC

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