IGC50T120T8RQ IGBT Transistor

The IGC50T120T8RQ is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC50T120T8RQ transistor as follows.

IGC50T120T8RQ Transistor Specification

Transistor Code		IGC50T120T8RQ
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.42V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		175 oC

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