IGC39T65T8M IGBT Transistor

The IGC39T65T8M is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC39T65T8M transistor as follows.

IGC39T65T8M Transistor Specification

Transistor Code		IGC39T65T8M
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.82V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		175 oC

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