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IGC28T65QE IGBT Transistor

The IGC28T65QE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC28T65QE transistor as follows.

Circuit diagram symbol of the IGC28T65QE transistor

IGC28T65QE Transistor Specification

Transistor Code IGC28T65QE
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package CHIP
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.22V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 175 oC

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